학술논문
High-Endurance Long-Term Potentiation in Neuromorphic Organic Electrochemical Transistors by PEDOT:PSS Electrochemical Polymerization on the Gate Electrode.
Document Type
Academic Journal
Author
Mariani F; Department of Industrial Chemistry 'Toso Montanari', Alma Mater Studiorum - University of Bologna, Viale del Risorgimento 4, 40136 Bologna, Italy.; Decataldo F; Department of Physics and Astronomy, Alma Mater Studiorum - University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy.; Bonafè F; Department of Physics and Astronomy, Alma Mater Studiorum - University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy.; Tessarolo M; Department of Physics and Astronomy, Alma Mater Studiorum - University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy.; Cramer T; Department of Physics and Astronomy, Alma Mater Studiorum - University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy.; Gualandi I; Department of Industrial Chemistry 'Toso Montanari', Alma Mater Studiorum - University of Bologna, Viale del Risorgimento 4, 40136 Bologna, Italy.; Fraboni B; Department of Physics and Astronomy, Alma Mater Studiorum - University of Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy.; Scavetta E; Department of Industrial Chemistry 'Toso Montanari', Alma Mater Studiorum - University of Bologna, Viale del Risorgimento 4, 40136 Bologna, Italy.
Source
Publisher: American Chemical Society Country of Publication: United States NLM ID: 101504991 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1944-8252 (Electronic) Linking ISSN: 19448244 NLM ISO Abbreviation: ACS Appl Mater Interfaces Subsets: MEDLINE
Subject
Language
English
Abstract
The brain exhibits extraordinary information processing capabilities thanks to neural networks that can operate in parallel with minimal energy consumption. Memory and learning require the creation of new neural networks through the long-term modification of the structure of the synapses, a phenomenon called long-term plasticity. Here, we use an organic electrochemical transistor to simulate long-term potentiation and depotentiation processes. Similarly to what happens in a synapse, the polymerization of the 3,4-ethylenedioxythiophene (EDOT) on the gate electrode modifies the structure of the device and boosts the ability of the gate potential to modify the conductivity of the channel. Operando AFM measurements were carried out to demonstrate the correlation between neuromorphic behavior and modification of the gate electrode. Long-term enhancement depends on both the number of pulses used and the gate potential, which generates long-term potentiation when a threshold of +0.7 V is overcome. Long-term depotentiation occurs by applying a +3.0 V potential and exploits the overoxidation of the deposited PEDOT:PSS. The induced states are stable for at least 2 months. The developed device shows very interesting characteristics in the field of neuromorphic electronics.