부산대학교 도서관

HRTEM images of Zn implanted Si after Xe ion irradiation with fluence of 7.5 × 1014/cm2. The single crystal CZ n-Si(1 0 0) substrates were implanted by 64Zn+ ions with a fluence of 5 × 1016/cm2 and energy of 50 keV to form Zn nanoparticle (NP). During implantation, the Si substrate the temperature was constant at about 350 °C. After that, the samples were irradiated at room temperature by 167 MeV 132Xe26+ ions with fluence at 7.5 × 1014/cm2 at 45° incident angle. The sample surface topology before and after Xe ion irradiation was studied using scanning electron microscopy. Structural changes in pre-implanted and Xe ion irradiated samples were examined by transmission electron microscopy in cross-sectional mode. It was found that swift Xe ion irradiation results in arise of radiation-induce defect of different kind. Defect structure of Si substrate consists of small-angle boundaries, dislocation and interstitial type planar defects. After swift Xe ion irradiation the form change of Zn NPs and increase of the NP average size were observed. [ABSTRACT FROM AUTHOR]