학술논문
Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al2 O3 on freshly molecular beam epitaxy grown GaAs
Document Type
Article
Author
Source
Subject
*ALUMINUM compounds
*CHEMICAL vapor deposition
*CHEMICAL processes
*MOLECULAR beam epitaxy
*GALLIUM arsenide
*ANALYTICAL chemistry
*SURFACES (Technology)
*X-ray photoelectron spectroscopy
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Language
ISSN
0167-9317
Abstract
Abstract: Interfacial chemical analyses and electrical characterization of in situ atomic layer deposited (ALD) Al2O3 on freshly molecular beam epitaxy (MBE) grown n- and p- GaAs (001) with a (4×6) surface reconstruction are performed. The capacitance–voltage (C–V) characteristics of as-deposited and 550°CN2 annealed samples are correlated with their corresponding X-ray photoelectron spectroscopy (XPS) interfacial analyses. The chemical bonding for the as-deposited ALD-Al2O3/n- and p-GaAs interface is similar, consisting of Ga2O (Ga1+) and As-As bonding (As0) without any detectable arsenic oxides or Ga2O3; the interfacial chemical environments remained unchanged after 550°CN2 annealing for 1hr. Both as-deposited and annealed p-GaAs metal–oxide-semiconductor capacitors (MOSCAPs) exhibit C–V characteristics with small frequency dispersion (<5%). In comparison, n-GaAs MOSCAPs shows much pronounced frequency dispersion than their p-counterparts. [Copyright &y& Elsevier]