부산대학교 도서관

VO thin films were grown on silicon substrates using AlO thin films as the buffer layers. Compared with direct deposition on silicon, VO thin films deposited on AlO buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 °C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/AlO/VO/Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The C- V measurement result indicates that the phase transformation of VO thin films can be induced by an electrical field. [ABSTRACT FROM AUTHOR]