학술논문
Calculation of energy characteristics for SiGe-Si structures with single quantum wells.
Document Type
Article
Author
Source
Subject
*FORCE & energy
*SILICON compounds
*MOLECULAR structure
*QUANTUM wells
*NUMERICAL analysis
*THICKNESS measurement
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Language
ISSN
0021-9037
Abstract
Energy characteristics of SiGe-Si quantum-size structures with single quantum wells were calculated numerically based on a four-band k· p method. Analytical expressions for the Luttinger parameters are obtained as functions of the component composition of SiGe compounds. Analytical expressions for the energy ħω of optical band-to-band transitions are obtained in an effective mass approximation and agree well with numerical calculations by the k· p method. This allows one to determine accurately a range of changes while varying the component compositions and thickness of the active and barrier layers. [ABSTRACT FROM AUTHOR]