부산대학교 도서관

C-axis oriented ZnO thin films were prepared on silica glass substrates by the sol-gel method using a zinc naphthenate precursor. As-deposited films were prefired at 250 °C for 60 min, at 350 °C for 30 min, and at 500 °C for 10 min, followed by final annealing at 600-900 °C in air. Crystal structure, surface morphology, surface roughness and transmittance at the visible range were analyzed by high resolution X-ray diffraction, field emission scanning electron microscopy, scanning probe microscopy, and ultraviolet spectrophotometry. (002)-oriented ZnO films were obtained by annealing at 600 °C, and at higher temperatures for the films prefired at 350 °C and 500 °C. All the films exhibited a high transmittance, above 80%, in the visible region, and showed a sharp fundamental absorption edge at 0.38-0.40 µm. The most highly c-axis oriented ZnO with a homogeneous surface was observed at a prefiring temperature of 350 °C. [ABSTRACT FROM AUTHOR]