학술논문
Electrical transport properties of CoSi2 and Co(SixGe1-x)2 films formed by different methods.
Document Type
Article
Author
Source
Subject
*THIN films
*INTEGRATED circuits
*LOW temperatures
*
*
Language
ISSN
0021-8979
Abstract
Presents a study which investigated the electrical transport properties of CoSi[sub2] and Co(Si[subx]Ge[sub1-x])2 films formed by different methods. Properties of the thin films after low temperature annealing; Discussion on the hole carrier density of the samples studied; Characteristic of CoSi[sub2] which made it a desirable material for contact and gate level interconnection of large scale integrated circuits.