학술논문

Measurement of Johnson Noise Induced by p-Stops in Silicon Microstrip Detectors.
Document Type
Article
Source
IEEE Transactions on Nuclear Science. Aug2013 Part 3, Vol. 60 Issue 5, p4022-4025. 4p.
Subject
*NOISE measurement
*MICROSTRIP transmission lines
*DETECTORS
*ELECTRIC potential
*ELECTRONS
Language
ISSN
0018-9499
Abstract
We report on noise measurements performed on the n-side of double-sided, AC-coupled, punch-through biased silicon strip detectors. The noise has been measured over a wide range of peaking times and bias voltages, allowing the disentanglement of two excess noise terms, one related to the p-stops surrounding the strips and the other related to the electron accumulation layer at the Si/\ SiO2 interface. [ABSTRACT FROM AUTHOR]