부산대학교 도서관

In this article, a novel reverse-conducting lateral insulated gate bipolar transistor (RC-LIGBT) with embedded diode and p-type Schottky Barrier Diode (p-SBD) is proposed. The two diodes are connected in series through a floating electrode, which provides a current path for carriers in reverse-conducting mode. Compared with the Separated Shorted-Anode RCLIGBT (SSA-RC-LIGBT), the proposed structure not only eliminates the snapback voltage (Δ VSB) but also avoids the waste of device area. Therefore, the superior reverse recovery characteristics and excellent tradeoff relationship between ON-state voltage (VON) and turn-off loss (EOFF) are obtained. The reverse recovery charge of the proposed RC-LIGBT shows 43.9% and 63.2% reduction compared with those of the SSA-RC-LIGBT with LB (distance between the p+ collector and the shorted n+ collector) being 34 and 64μm, respectively. The turn-off loss of the proposed RC-LIGBT at VON = 2.6 V is reduced by 68.2% and 87.1% compared with those of the SSA-RC-LIGBT with Δ VSB = 0.48 V and Δ VSB = 0.17 V, respectively. Moreover, the proposed RC-LIGBT has a self-adjusted collector injection efficiency under different temperatures to dramatically improve the Short Circuit Safe Operation Area (SCSOA). [ABSTRACT FROM AUTHOR]