학술논문
Optical study of heterointerface configuration in narrow GaAs/AlGaAs single quantum wells prepared with growth interruption.
Document Type
Article
Author
Source
Subject
*QUANTUM wells
*MOLECULAR beam epitaxy
*PHOTOLUMINESCENCE
*HEAT transfer
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Language
ISSN
0021-8979
Abstract
Presents a study that investigated the heterointerface configuration in GaAs/AlGaAs quantum wells grown by molecular-beam epitaxy with growth interruption using photoluminescence and time-resolved photoluminescence. Description of the photoluminescence spectra of the growth-interrupted sample; Analysis of the thermal transfer process of the photogenerated carriers and luminescence decay process; Information on estimated lateral size of the microroughness in the sample.