학술논문
Multiple Gate Field-Effect Transistors for Future CMOS Technologies.
Document Type
Article
Author
Source
Subject
*COMPLEMENTARY metal oxide semiconductors
*SEMICONDUCTORS
*TRANSISTORS
*ELECTRONICS
*ELECTRICAL engineering
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Language
ISSN
0256-4602
Abstract
This is a review paper on the topic of multiple gate field effect transistors: MuGFETs, or FinFETs, as they are called. First, the motivation behind multiple gate FETs is presented. This is followed by looking at the evolution of FinFET technologies; the main flavors (variants) of multigate FETs; and their advantages/disadvantages. The physics and technology of these devices is briefly discussed. Results are then presented which show the performance figures of merit of FinFETs, and their strengths and weaknesses. Finally, a perspective on the future of the FinFET technology is presented. This paper is a judicious mix of the author's original work on FinFETs and other contemporary know-how available in the literature on this topic. [ABSTRACT FROM AUTHOR]