학술논문
Instability of characteristics of SiC detectors subjected to extreme fluence of nuclear particles.
Document Type
Article
Author
Source
Subject
*CONSTITUTION of matter
*ATOMS
*MIRROR nuclei
*PROTONS
*INTERMOLECULAR forces
*MOLECULAR dynamics
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Language
ISSN
1063-7826
Abstract
The operation of detectors irradiated with 8-MeV protons at a fluence of 3 × 1014 cm−2 has been studied. The detectors were based on modern CVD-grown n-4 H-SiC films with a concentration of uncompensated donors equal to ∼2 × 1014 cm−3 and a thickness of 55 μm. The high concentration of primary radiation defects (∼2 × 1017 cm−3) determined the deep compensation of the films. The basic characteristics of the detectors—pulse amplitude and resolution—exhibited temporal instability. This effect is due to prolonged capture of nonequilibrium carriers by radiation centers and the resulting appearance of a polarization voltage in the bulk of the detector. The kinetics of attainment of steady values by the quantities specified above was analyzed. [ABSTRACT FROM AUTHOR]