학술논문

High pressure studies on the electrical resistivity of As-Te-bond Si glasses and the effect of network topological thresholds.
Document Type
Article
Source
High Pressure Research. Mar2008, Vol. 28 Issue 1, p55-62. 8p. 1 Chart, 7 Graphs.
Subject
*GLASS
*SILICON compounds
*CHALCOGENIDES
*HIGH pressure (Science)
*TEMPERATURE
*PERCOLATION
Language
ISSN
0895-7959
Abstract
The variation of resistivity in an amorphous As30Te70-xSix system of glasses with high pressure has been studied for pressures up to 8 GPa. It is found that the electrical resistivity and the conduction activation energy decrease continuously with increase in pressure, and samples become metallic in the pressure range 1.0-2.0 GPa. Temperature variation studies carried out at a pressure of 0.92 GPa show that the activation energies lie in the range 0.16-0.18 eV. Studies on the composition/average co-ordination number 〈 r〉 dependence of normalized electrical resistivity at different pressures indicate that rigidity percolation is extended, the onset of the intermediate phase is around 〈 r〉=2.44, and completion at 〈 r〉=2.56, respectively, while the chemical threshold is at 〈 r〉=2.67. These results compare favorably with those obtained from electrical switching and differential scanning calorimetric studies. [ABSTRACT FROM AUTHOR]