학술논문
Electronic properties of ultrathin films based on pyrrolofullerene molecules on the surface of oxidized silicon.
Document Type
Article
Author
Source
Subject
*FULLERENES
*ELECTRONIC structure
*THIN films
*SILICON oxidation
*SUBSTRATES (Materials science)
*ELECTRON energy states
*INTERMEDIATES (Chemistry)
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Language
ISSN
1063-7834
Abstract
Results of the investigation into the interface formation during the deposition of the films based on aziridinylphenylpyrrolofullerene (APP-C) up to 8 nm thick on the surface of the oxidized silicon substrate are presented. The procedure of detecting reflection of testing low-energy electron beam from the surface implemented in the total current spectroscopy mode with a change in the incident electron energy from 0 to 25 eV is used. The structure of maxima in the total current spectra induced by the APP-C deposited film is established, and the character of interrelation of these maxima with π* and σ* energy bands in the studied materials is determined. It is revealed due to analyzing the variation in intensities of the total current spectra of the deposited APP-C film and the (SiO) n-Si substrate that the APP-C film is formed at the early deposition stage with the coating thickness thinner than one monolayer without the formation of the intermediate modified organic layer. As the APP-C/(SiO) n-Si interface is formed, the work function of the surface increases by 0.7 eV, which corresponds to the transfer of the electron density from substrate (SiO) n-Si toward the film APP-C. The optical absorption spectra of the APP-C films are measured and compared with the spectra of films of unsubstituted C. [ABSTRACT FROM AUTHOR]