학술논문
Localization effects on recombination dynamics in InAs/InP self-assembled quantum wires emitting at 1.5 μm.
Document Type
Article
Author
Source
Subject
*NANOWIRES
*PHOTOLUMINESCENCE
*TEMPERATURE
*NANOSTRUCTURED materials
*LUMINESCENCE
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Language
ISSN
0021-8979
Abstract
We have studied the temperature dependence of the photoluminescence of a single layer of InAs/InP(001) self-assembled quantum wires emitting at 1.5 μm. The non-radiative mechanisms responsible for the quenching of the emission band have been identified. The exciton dynamics has been investigated using time resolved photoluminescence measurements. The results have been explained through the interplay between free excitons and localized states (arising from size fluctuations in the quantum wires). [ABSTRACT FROM AUTHOR]