학술논문
Laser generated Ge ions accelerated by additional electrostatic field for implantation technology.
Document Type
Article
Author
Source
Subject
*GERMANIUM
*ELECTROSTATIC fields
*ELECTROSTATIC accelerators
*SIMULATION methods & models
*CRYSTAL structure
*FOURIER transform infrared spectroscopy
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Language
ISSN
0169-4332
Abstract
Abstract: The paper presents research on the optimization of the laser ion implantation method with electrostatic acceleration/deflection including numerical simulations by the means of the Opera 3D code and experimental tests at the IPPLM, Warsaw. To introduce the ablation process an Nd:YAG laser system with repetition rate of 10Hz, pulse duration of 3.5ns and pulse energy of 0.5J has been applied. Ion time of flight diagnostics has been used in situ to characterize concentration and energy distribution in the obtained ion streams while the postmortem analysis of the implanted samples was conducted by the means of XRD, FTIR and Raman Spectroscopy. In the paper the predictions of the Opera 3D code are compared with the results of the ion diagnostics in the real experiment. To give the whole picture of the method, the postmortem results of the XRD, FTIR and Raman characterization techniques are discussed. Experimental results show that it is possible to achieve the development of a micrometer-sized crystalline Ge phase and/or an amorphous one only after a thermal annealing treatment. [Copyright &y& Elsevier]