학술논문
Ion-beam synthesis and characterization of narrow-gap A3 B5 nanocrystals in Si: Effect of implantation and annealing regimes.
Document Type
Article
Source
Subject
*ION beams
*NANOCRYSTAL synthesis
*SILICON
*GALLIUM antimonide
*INDIUM arsenide
*ANNEALING of metals
*INTERFACES (Physical sciences)
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Language
ISSN
0921-5107
Abstract
Highlights: [•] Ion implantation and annealing were used to synthesize InAs and GaSb nanocrystals (NCs) in Si. [•] Nanocrystal size is varied from 2 to 100nm depending on implantation and annealing regimes and on getter layer presence. [•] Strain relaxation in A3B5/Si systems results in a misfit dislocation networks creation at A3B5 nanoclusters/Si interfaces. [•] An anomalous bright “glowing” of nanocrystal/Si interfaces in dark-field TEM images is observed and discussed, too. [ABSTRACT FROM AUTHOR]