부산대학교 도서관

An improved lateral power p-channel trench metal–oxide–semiconductor field-effect transistor (MOSFET) is proposed. By using a technique of variation vertical doping (VVD), the threat of charge imbalance posted by the parasitic trench capacitance is eliminated. Moreover, a p-type VVD increases the number of carriers, and an n-type VVD intensifies the charge compensation effect. Hence, compared to the conventional device without VVD, the proposed device gets a significantly improved tradeoff relationship between the breakdown voltage (BV) and the specific ON-resistance (RON,SP). According to the simulation results, the proposed device using the triple piecewise VVD obtains a RON,SP of 10.6 mΩ ⋅ cm2 at a BV of 440 V, reaching a figure of merit (FOM = BV2/RON,SP) being 2.4 times larger than that of the prior art. [ABSTRACT FROM AUTHOR]