학술논문
Temperature effect on carrier transport characteristics in SrTiO3-δ /Si p-n heterojunction.
Document Type
Article
Author
Source
Subject
*THIN films
*EPITAXY
*OPTICAL diffraction
*SURFACES (Technology)
*OXIDE minerals
*ELECTRON diffraction
*
*
*
*
*
Language
ISSN
0003-6951
Abstract
A p-n junction has been fabricated by depositing an electron-doped (n-) SrTiO3-δ film on a hole-doped (p-) Si substrate with a two atomic-layers thickness epitaxial SrO buffer layer using laser molecular beam epitaxy technique. Good crystallinity and smooth surface of SrTiO3-δ were confirmed by reflection high-energy electron diffraction and x-ray diffraction. The junction shows good rectifying behavior at room temperature, and strong temperature dependence of current-voltage (I-V) properties in the range of 200–300 K. These results present potential applications in future microelectronic devices based on growing perovskite oxide thin films on conventional semiconductors. [ABSTRACT FROM AUTHOR]