학술논문

Raman spectroscopy investigation of defect occurrence in graphene grown on copper single crystals.
Document Type
Article
Source
Physica Status Solidi (B). Dec2013, Vol. 250 Issue 12, p2653-2658. 6p.
Subject
*RAMAN spectroscopy
*GRAPHENE
*COPPER
*SINGLE crystals
*CHEMICAL vapor deposition
*RAMAN spectra
Language
ISSN
0370-1972
Abstract
The presented study focuses on the appearance of defects in graphene grown on Cu(100), (110) and (111) single crystals by low pressure chemical vapour deposition (CVD) from methane with either 12C or 13C isotope. By analysing the Raman D band, we assume the defects originate mainly on boundaries between tilted graphene domains grown on Cu(100) and Cu(110), in contrast to graphene grown on Cu(111), where the D band is scarce in the Raman spectra. The other main source of defects may come from graphene edges around small adlayers randomly present in the samples. [ABSTRACT FROM AUTHOR]