학술논문
Electroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodes.
Document Type
Article
Source
Subject
*ELECTROLUMINESCENCE
*SEMICONDUCTORS
*QUANTUM wells
*LIGHT emitting diodes
*ENERGY-band theory of solids
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Language
ISSN
0003-6951
Abstract
Optical emission resulting from 405 nm selective photoexcitation of carriers in the GaInN/GaN quantum well (QW) active region of a light-emitting diode reveals two recombination channels. The first recombination channel is the recombination of photoexcited carriers in the GaInN QWs. The second recombination channel is formed by carriers that leak out of the GaInN QW active region, self-bias the device in forward direction, induce a forward current, and subsequently recombine in the GaInN active region in a spatially distributed manner. The results indicate dynamic carrier transport involving active, confinement, and contact regions of the device. [ABSTRACT FROM AUTHOR]