부산대학교 도서관

Laserscribing is an attractive reduced graphene oxide (rGO) growthand patterning technology because the process is low-cost, time-efficient,transfer-free, and flexible. Various laser-scribed rGO (LSG) componentssuch as capacitors, gas sensors, and strain sensors have been demonstrated.However, obstacles remain toward practical application of the technologywhere all the components of a system are fabricated using laser scribing.Memory components, if developed, will substantially broaden the applicationspace of low-cost, flexible electronic systems. For the first time,a low-cost approach to fabricate resistive random access memory (ReRAM)using laser-scribed rGO as the bottom electrode is experimentallydemonstrated. The one-step laser scribing technology allows transfer-freerGO synthesis directly on flexible substrates or non-flat substrates.Using this time-efficient laser-scribing technology, the patterningof a memory-array area up to 100 cm2can be completed in25 min. Without requiring the photoresist coating for lithography,the surface of patterned rGO remains as clean as its pristine state.Ag/HfOx/LSG ReRAM using laser-scribingtechnology is fabricated in this work. Comprehensive electrical characteristicsare presented including forming-free behavior, stable switching, reasonablereliability performance and potential for 2-bit storage per memorycell. The results suggest that laser-scribing technology can potentiallyproduce more cost-effective and time-effective rGO-based circuitsand systems for practical applications. [ABSTRACT FROM AUTHOR]