학술논문
Realizing a family of transition-metal-oxide memristors based on volatile resistive switching at a rectifying metal/oxide interface.
Document Type
Article
Author
Source
Subject
*MEMRISTORS
*ARTIFICIAL neural networks
*TRANSITION metal oxides
*METALLIC oxides
*ELECTRONICS
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Language
ISSN
0022-3727
Abstract
There is strong interest in creating new memristors due to their significant impact in many fields including digital information systems, analogue circuits and artificial neural networks as a new class of fundamental electronic elements. Here we report a volatile resistive switching effect at a prototypical Schottky metal/oxide interface and realize a family of transition-metal-oxide memristors showing distinct hysteresis characteristics based on the interface. The results not only provide further understanding on the electrical behaviour of metal/oxide interfaces but also indicate the key role of metal/oxide interfaces as basic building blocks in transition-metal–oxide memristors. [ABSTRACT FROM AUTHOR]