부산대학교 도서관

A novel device structure with a high-k HfO2 charge storage layer and dual tunneling layer (DTL) (SiO2/Si3N4) is presented in this paper. Combining advantages of the high trapping efficiency of high-k materials and enhanced charge injection from the substrate through the DTL, the device achieves a fast program/erase speed and a large memory window. The device demonstrates excellent retention due to its physically thick DTL and also improved endurance without any increase of programming Vth throughout the cyclic test as compared with SONOS Flash memory devices using an Si3 N4 trapping layer. [ABSTRACT FROM AUTHOR]