부산대학교 도서관

The effect of unintentional nitrogen incorporation on n-type doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy was demonstrated. Nitrogen atoms, at a concentration as high as 2 × 1019 cm−3, were confirmed to originate from the decomposition of a pyrolytic boron nitride (PBN) crucible in the plasma source. These atoms acted as acceptors in β-Ga2O3 and severely compensate Si donors, thereby hindering the generation of n-type β-Ga2O3. Instead, a quartz (SiO2) crucible free of nitrogen atoms could overcome this problem, and led to generation of n-type β-Ga2O3 with a tunable electron concentration of 5.0 × 1016 to 2.6 × 1019 cm−3. [ABSTRACT FROM AUTHOR]