학술논문
Time-dependent diffusion of ion-implanted arsenic in thermally grown SiO2.
Document Type
Article
Author
Source
Subject
*ARSENIC
*SILICON oxide
*DIFFUSION
*
*
Language
ISSN
0021-8979
Abstract
Presents an analysis of arsenic distributions in the SiO[sub2]. Assumptions which determine the diffusivity of arsenic from complicated arsenic distributions; Diffusion of arsenic implanted into thermally grown SiO[sub2]; Factor attributed to the time-dependent diffusion.