학술논문
Elimination of secondary defects in preamorphized Si by C[sup +] implantation.
Document Type
Article
Author
Source
Subject
*SEMICONDUCTOR defects
*ION implantation
*SILICON
*CARBON
*
*
*
Language
ISSN
0003-6951
Abstract
Examines the elimination of secondary defects in preamorphized silicon by carbon ion implantation. Impact of carbon on dislocation loop size and density; Investigation of carbon depth profiles; Occurrence of profile differences following annealing.