학술논문

Modeling of Radiation Hardness of a CCD with High-Speed Column Parallel Readout
Document Type
Article
Source
Nuclear Physics B Proceedings Supplement. Dec2009, Vol. 197 Issue 1, p349-352. 4p.
Subject
*RADIATION hardening (Electronics)
*CHARGE coupled devices
*LINEAR accelerators
*FLAVOR in particle physics
*CHARGE transfer
*COMPUTER-aided design
*SIMULATION methods & models
*RADIATION trapping
Language
ISSN
0920-5632
Abstract
Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived particles. The Linear Collider Flavour Identification (LCFI) collaboration is developing Column-Parallel CCDs (CPCCDs) for the vertex detector of a future Linear Collider. The CPCCDs can be read out many times faster than standard CCDs, significantly increasing their operating speed. Radiation hardness is an important aspect in the CCD development. Bulk radiation damage in the silicon leads to electron traps and hence to charge transfer inefficiency (CTI). The effects of the two trap levels 0.17 and 0.44 eV are considered. We have extended our Analytic Model to include the effects of the shape of the signal charge packet and the clock voltage on the CTI determination. The CTI values determined with the Analytic Model largely agree with those from a full TCAD simulation. [Copyright &y& Elsevier]