부산대학교 도서관

AlN layers grown on Al[sub 2]O[sub 3] substrates by metalorganic chemical vapor desposition were implanted with high doses (3 × 10[sup 16] cm[sup -2], 250 keV) of Co[sup +], Cr[sup +], or Mn[sup +]. Band-edge photoluminescence intensity at ∼6 eV was significantly reduced by the implant process and was not restored by 950 °C annealing. A peak was observed at 5.89 eV in all the implanted samples. Impurity transitions at 3.0 and 4.3 eV were observed both in implanted and unimplanted AlN. X-ray diffraction showed good crystal quality for the 950 °C annealed implanted samples, with no ferromagnetic second phases detected. The Cr- and Co-implanted AlN showed hysteresis present at 300 K from magnetometry measurements, while the Mn-implanted samples showed clear loops up to ∼100 K. The coercive field was <250 Oe in all cases. [ABSTRACT FROM AUTHOR]