학술논문
Growth of spectroscopic grade Cd0.9 Zn0.1 Te:In by THM technique
Document Type
Article
Author
Source
Subject
*CRYSTAL growth
*SEMICONDUCTOR doping
*INDIUM
*TELLURIDES
*CADMIUM compounds
*SOLUTION (Chemistry)
*MICROFABRICATION
*NUCLEAR counters
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Language
ISSN
0022-0248
Abstract
Abstract: Large indium-doped detector grade (52mm diameter, 1.1kg) Cd0.9Zn0.1Te crystals have been grown by THM technique from Te-rich solution. The as-grown crystals showed the dark resistivity of 2×1010 Ωcm and mobility life time product of electrons of 4–7×10−3 cm2/V. A quasi-hemispherical configuration was used in the device fabrication, which provides an economic way of electron only detector configuration. A resolution of 2% was achieved for the 137Cs 662keV gamma line at room temperature for the as-grown THM samples. [Copyright &y& Elsevier]