학술논문
Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al 2 O 3 /ZrO 2 Stacked Gate Dielectrics.
Document Type
Article
Source
Subject
*METAL oxide semiconductor field-effect transistors
*MODULATION-doped field-effect transistors
*INDIUM gallium zinc oxide
*ALUMINUM oxide
*PINK noise
*DIELECTRICS
*GALLIUM nitride
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Language
ISSN
1996-1944
Abstract
A metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed based on using a Al2O3/ZrO2 stacked layer on conventional AlGaN/GaN HEMT to suppress the gate leakage current, decrease flicker noise, increase high-frequency performance, improve power performance, and enhance the stability after thermal stress or time stress. The MOS-HEMT has a maximum drain current density of 847 mA/mm and peak transconductance of 181 mS/mm. The corresponding subthreshold swing and on/off ratio are 95 mV/dec and 3.3 × 107. The gate leakage current can be reduced by three orders of magnitude due to the Al2O3/ZrO2 stacked layer, which also contributes to the lower flicker noise. The temperature-dependent degradation of drain current density is 26%, which is smaller than the 47% of reference HEMT. The variation of subthreshold characteristics caused by thermal or time stress is smaller than that of the reference case, showing the proposed Al2O3/ZrO2 stacked gate dielectrics are reliable for device applications. [ABSTRACT FROM AUTHOR]