학술논문
Effect of temperature and V/III ratio on the initial growth of indium nitride using plasma-assisted metal-organic chemical vapor deposition.
Document Type
Article
Source
Subject
*INDIUM
*NITRIDES
*CHEMICAL vapor deposition
*ORGANIC compounds
*PHYSIOLOGICAL effects of temperature
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Language
ISSN
0021-8979
Abstract
The growth of Indium nitride (InN) was studied in the nucleation stage by metal-organic chemical vapor deposition technique using atomic nitrogen from an RF microwave plasma source. Deposition was carried out through a range of substrate temperatures from 375 to 550 °C and at varying V/III ratios from 950 to 3150. We found that the diffusion lifetime of In atoms on the substrate becomes maximized at the growth temperature 475 °C, in which low temperature photoluminescence exhibits the excellent optical properties of the materials with a bandgap of 0.69 eV and a width of 34 meV. In addition, we observed that nitrogen cracking efficiency is significantly improved by using plasma so that high quality InN crystallites were grown with a very low V/III ratio around 950. [ABSTRACT FROM AUTHOR]