학술논문
Study of the morphology of the InAs-on-AlSb interface.
Document Type
Article
Source
Subject
*SURFACES (Physics)
*EPITAXY
*ELECTRON mobility
*QUANTUM wells
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Language
ISSN
0021-8979
Abstract
Studies various InAs-on-AlSb interface structures grown by molecular beam epitaxy. Use of an atomic force microscope; Correlation between the interface configuration and the electron mobility in the InAs quantum well; Performance of transport measurements on the corresponding quantum well structures to establish the correlation between the interfacial morphology and the electron mobility in the channel.