부산대학교 도서관

This paper proposes a method of extracting parameters which can systematically be applied to a large number of MOSFET models. The previous method for parameter extraction based on the numerical optimization has a problem in that the computation method for the initial value depends on the model and the method cannot easily be applied to various models. In the proposed method, a simple intermediate model composed of a few parameters is introduced and the computation procedure for the initial value is decomposed clearly into the model-independent part and the model-dependent part. When the proposed method is applied to a new model, only the latter part should be considered. In other words, the computation procedure for the initial value is made systematic. The parameter extraction experiment is attempted for major MOSFET models included in the circuit simulator SPICE and the applicability of the proposed method, and the accuracy of the extracted parameters are verified. [ABSTRACT FROM AUTHOR]