학술논문
The study of specific features of working characteristics of multicomponent heterostructures and AlInGaN-based light-emitting diodes.
Document Type
Article
Author
Source
Subject
*LIGHT emitting diodes
*SEMICONDUCTOR diodes
*ELECTROLUMINESCENT devices
*HETEROSTRUCTURES
*SUPERLATTICES
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Language
ISSN
1063-7826
Abstract
Simulation of multicomponent AlInGaN-based heterostructures for their use in light-emitting diodes is performed. The effect of nonuniform distribution of In atoms in the light-emitting “nanodiodes” on the working characteristics of the device in general are determined. A model describing the structure of multicomponent AlInGaN heterostructures for light-emitting diodes is developed. [ABSTRACT FROM AUTHOR]