학술논문

Investigation of the n[sup +] -p-π-p[sup +] structure of silicon avalanche diodes by charged particles.
Document Type
Article
Source
Applied Physics A: Materials Science & Processing. 1998, Vol. 66 Issue 5, p549. 6p.
Subject
*AVALANCHE diodes
*SILICON
*COLLIMATORS
*SEMICONDUCTORS
Language
ISSN
0947-8396
Abstract
Abstract. The purpose of our work is to investigate the properties of n[sup +]-p-pi-p[sup +] silicon avalanche diodes for the detection of heavy charged particles. Two sets of measurements of the alpha spectrum of [sup 241]Am were carried out, one without a collimator and one with a collimator. The obtained alpha spectra for all bias voltages differ substantially from the spectrum obtained with a conventional semiconductor detector. The experiments clarified the amplification mechanism of the type n[sup +]-p-pi-p[sup +] silicon avalanche detector for charged particles. We demonstrated that the reasons for the unconventional alpha spectra are the mechanisms of internal amplification and also the specific detector design. [ABSTRACT FROM AUTHOR]