학술논문
Intensity dependence of the third-harmonic-generation efficiency for high-power far-infrared radiation in n-silicon.
Document Type
Article
Author
Source
Subject
*LASER beams
*SILICON
*DOPED semiconductors
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*
Language
ISSN
0021-8979
Abstract
Presents a study that measured the third-harmonic generation of far-infrared laser radiation in doped silicon. Observation of the intensity dependence of its nonlinear coefficient; Information on the linear and nonlinear optical properties of doped semiconductors in the far-infrared regime.