학술논문
Electronic transport studies of Ag-doped Bi2 Se3 topological insulator.
Document Type
Article
Source
Subject
*TOPOLOGICAL insulators
*DOPING agents (Chemistry)
*PHOTOELECTRON spectroscopy
*BINDING energy
*MAGNETORESISTANCE
*CONDUCTION bands
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Language
ISSN
0021-8979
Abstract
The structural, magnetotransport, and angle-resolved photoemission spectroscopy (ARPES) of Ag-doped Bi2Se3 single crystals are presented. Temperature dependent resistivity exhibits metallic behavior with a slope change above 200 K for Ag-doped Bi2Se3. The magnetoresistance shows positive quadratic dependence at low fields satisfying Kohler's rule. Hall resistivity measurement shows that electrons are dominant charge carriers. Furthermore, these results agree well with the ARPES spectra observed at T = 20 K, where the Fermi level lies inside the bulk conduction band. The Dirac point of the topological surface states is shifted toward higher binding energy (∼0.12 eV) for Ag-doped samples as compared to pristine Bi2Se3. [ABSTRACT FROM AUTHOR]