학술논문

Influence of film thickness on the structural, electrical and photoluminescence properties of vacuum deposited Alq3 thin films on c-silicon substrate
Document Type
Article
Source
Thin Solid Films. Jul2009, Vol. 517 Issue 17, p5298-5300. 3p.
Subject
*THICKNESS measurement
*ELECTRIC properties of metallic films
*STRUCTURAL analysis (Science)
*PHOTOLUMINESCENCE
*ALUMINUM films
*VACUUM technology
*SILICON
*SEMICONDUCTOR wafers
Language
ISSN
0040-6090
Abstract
Abstract: In this work, the influence of film thickness on the structural, electrical and photoluminescence (PL) properties of tris (8-hydroxyquinoline) aluminum (Alq3) films prepared by vacuum evaporation technique on crystal silicon (c-Si) substrate were studied. Fourier transform infrared (FTIR) spectroscopy, current–voltage (I–V), capacitance–voltage (C–V) and PL spectroscopy measurements were done to investigate these properties. The results demonstrated that the molecular organization of the deposited film was not affected by the film thickness. The PL emission energy and intensity increased with increase in film thickness. The results showed that the turn-on voltage (V on) and transition voltage (V T) were also dependent on the film thickness. [Copyright &y& Elsevier]