학술논문
Graphene–GraphiteOxide Field-Effect Transistors.
Document Type
Article
Source
Subject
*GRAPHENE
*FIELD-effect transistors
*GRAPHITE
*OXIDES
*ELECTRON mobility
*GATE array circuits
*PERMITTIVITY
*SILICA
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Language
ISSN
1530-6984
Abstract
Graphene’s high mobility and two-dimensional naturemakeit an attractive material for field-effect transistors. Previous effortsin this area have used bulk gate dielectric materials such as SiO2or HfO2. In contrast, we have studied the useof an ultrathin layered material, graphene’s insulating analogue,graphite oxide. We have fabricated transistors comprising single orbilayer graphene channels, graphite oxide gate insulators, and metaltop-gates. The graphite oxide layers show relatively minimal leakageat room temperature. The breakdown electric field of graphite oxidewas found to be comparable to SiO2, typically ∼1–3× 108V/m, while its dielectric constant is slightlyhigher, κ ≈ 4.3. [ABSTRACT FROM AUTHOR]