학술논문
Directional emission from beryllium doped GaAs/AlGaAs nanowires.
Document Type
Article
Source
Subject
*BERYLLIUM
*GALLIUM arsenide
*NANOWIRES
*ALUMINUM compounds
*DOPED semiconductors
*MOLECULAR beam epitaxy
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Language
ISSN
1063-7850
Abstract
The emission directionality of self-catalytic GaAs nanowires in an AlGaAs shell, produced by molecular-beam epitaxy with a varied level of beryllium doping, is studied. It is shown that an undoped sample possesses pronounced waveguide properties along the growth direction. With increasing doping level, the intensity of the emission directed perpendicular to the lateral nanowire walls grows. [ABSTRACT FROM AUTHOR]