학술논문
Surface passivation of GaAs nanowires by the atomic layer deposition of AlN.
Document Type
Article
Author
Source
Subject
*GALLIUM arsenide
*NANOWIRES
*SURFACE passivation
*ATOMIC layer deposition
*ALUMINUM nitrate
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*
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*
Language
ISSN
1063-7826
Abstract
It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25-Å-thick AlN layer. [ABSTRACT FROM AUTHOR]