학술논문
Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon.
Document Type
Article
Author
Source
Subject
*GALLIUM arsenide
*QUANTUM dots
*SEMICONDUCTOR nanowires
*MOLECULAR beam epitaxy
*SILICON
*III-V semiconductors
*
*
*
*
*
Language
ISSN
1063-7826
Abstract
Data on the growth features and physical properties of GaAs inserts embedded in AlGaAs nanowires grown on Si(111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelength range for both active and barrier regions. The technology proposed opens up new possibilities for the integration of direct-band III-V materials on silicon. [ABSTRACT FROM AUTHOR]