학술논문
Nanomechanical properties of sputter-deposited HfO2 and HfxSi1-xO2 thin films.
Document Type
Article
Source
Subject
*HAFNIUM oxide
*HAFNIUM compounds
*THIN film research
*DIELECTRICS research
*DIELECTRIC devices
*
*
*
*
Language
ISSN
0021-8979
Abstract
The mechanical properties of sputter-deposited HfO2 and HfxSi1-xO2 films were studied as a function of composition using nanoindentation. The elastic modulus and hardness were measured at room temperature for as-deposited films of varying Hf content and for films subjected to annealing at 1000 °C. The elastic modulus and hardness of as-deposited films were found to increase monotonically with increasing HfO2 content, with the hardness increasing from 5.0 ± 0.3 GPa for pure SiO2 to 8.4 ± 0.4 GPa for pure HfO2. All films were found to be harder after annealing at 1000 °C, with the increase for SiO2 films attributed to densification of the SiO2 network and that for the HfxSi1-xO2 films to a combination of phase separation, densification, and crystallization. [ABSTRACT FROM AUTHOR]