학술논문
MOSiC (3C, 4H and 6H) Transistors 130nm by BSIM3v3 Model in Low Voltage and Low Power.
Document Type
Article
Author
Source
Subject
*SILICON carbide
*CHEMICAL synthesis
*SILICON compounds
*SILICON carbide fibers
*LOW voltage systems
*FIELD-effect transistors
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Language
ISSN
1791-2377
Abstract
Silicon carbide is a very interesting semiconductor for applications in high temperature, high frequency and high power. In this article, we have studied and compared MOS transistors with 130nm silicon carbide (3C-SiC, 4H-SiC and 6H-SiC) technologies using BSIM3v3 model. To perform this work we have used PSpice to study the characteristics I(V) and the transconductance gm as a function of temperature in the range -200° C to 750° C with a supply voltage VDS = 1.2V. We have also calculated the transition frequencies fT of the three types of transistors. Our results show that the (3C, 4H and 6H)-SiC transistors operate under a low voltage, low power, high temperature and high frequency in submicron dimension. [ABSTRACT FROM AUTHOR]