학술논문
Comparative Study of GaAs/GaInP and GaAs/AlGaAs Quantum Wells Grown by Metalorganic Vapor Phase Epitaxy.
Document Type
Article
Author
Source
Subject
*QUANTUM wells
*AUDITING standards
*EPITAXY
*GASES
*MOLECULAR spectra
*INDIUM gallium arsenide
*MOLECULAR beam epitaxy
*
*
*
*
*
*
Language
ISSN
0020-1685
Abstract
This paper presents results of a comparative experimental study aimed at producing GaAs/GaInP and GaAs/AlGaAs quantum wells (QWs) by metalorganic vapor phase epitaxy. The photoluminescence signal of the GaAs/GaInP QWs is shown to have a higher intensity (by a factor of 50–100) and, at the same time, a larger width (by a factor of ~2.5) in comparison with the GaAs/AlGaAs QWs. We analyze different approaches to controlling emission spectra of these QWs. [ABSTRACT FROM AUTHOR]