학술논문
Stimulated Emission in the 1.3-1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III-V Heterostructures on Silicon Substrates.
Document Type
Article
Author
Source
Subject
*STIMULATED emission
*EMISSIVITY
*QUANTUM wells
*HETEROSTRUCTURES
*SUBSTRATES (Materials science)
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Language
ISSN
1063-7826
Abstract
Abstract: Hybrid laser structures with AlGaInAs quantum wells are grown by metalorganic vapor phase epitaxy on Ge/Si(100) “virtual” substrates using GaAs and InP buffer layers. Stimulated emission is achieved under optical pumping of the prepared samples in the range of 1.3-1.5 μm at liquid-nitrogen temperature. The stimulated-emission threshold is 30-70 kW/cm2. [ABSTRACT FROM AUTHOR]