학술논문
Measurement of the thickness of natural oxide on a silicon relief step structure.
Document Type
Article
Author
Source
Subject
*OXIDES
*NONMETALS
*SILICON oxide
*TRAPEZOIDS
*TRANSMISSION electron microscopes
*PARTICLES (Nuclear physics)
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Language
ISSN
0543-1972
Abstract
Results of measurements of the thickness of natural oxide on a silicon structure in the form of a set of elements (protrusions) with trapezoidal profile, 2 μm step, width of upper base 10 nm, height of elements 500 nm, and tilt angle of lateral side of element relative to its base 54.7° are presented. The entire structure is covered with a natural oxide that appeared at room temperature. The distance between the {111} planes of silicon is used to assure traceability of the measurements. [ABSTRACT FROM AUTHOR]