학술논문
Distortion of the Profile of Surface Relief Elements of Single-Crystal Silicon Caused by Contamination in a Low-Voltage Scanning Electron Microscope.
Document Type
Article
Author
Source
Subject
*PHYSICS research
*SCANNING electron microscopes
*IRRADIATION
*ELECTRON energy states
*SURFACE relief gratings
*ELECTRON beams
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Language
ISSN
0543-1972
Abstract
This is a study of the influence of contamination in an S-4800 scanning electron microscope at electron energies of 1 keV on the profile of the surface relief elements of an MShPS-2.0K standard gauge. The observed width of the upper base of the relief elements is found to increase with electron irradiation dose in different irradiation modes. [ABSTRACT FROM AUTHOR]