부산대학교 도서관

We demonstrate the single photon counting mode at 405 and 850 nm with stoichiometric TiN-based microwave kinetic inductance detectors realized on a sapphire substrate and operated at bath temperatures over 300 mK. The detectors use single 15–25 nm-thick TiN layers featuring a critical temperature in the 2–3 K range. We found that the energy-resolving power R = E / Δ E exhibits an optimum with bath temperature, occurring in the 300–450 mK range, which can be almost double compared to those obtained at the lowest temperatures. Furthermore, the single photon regime is observed up to 700 mK. In addition to a high-temperature operation, the single stoichiometric layer would allow achieving a better uniformity in the critical temperature and, thus, kinetic inductance, compared to the often desired ∼1 K sub-stoichiometric TiN. [ABSTRACT FROM AUTHOR]